FGPF7N60RUFD

FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK

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FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK

October 2006

FGPF7N60RUFD
600V, 7A RUF IGBT CO-PAK
Features
High speed switching Low saturation voltage : VCE(sat) 1.95 V IC 7A High input impedance CO-PAK, IGBT with FRD : trr 50 ns (typ.) Short Circuit rated, 10us TC 100 C, VGE 15V, VCE 300V

Applications
Motor controls and general purpose inverters.

Description
Fairchild s Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature.

G
1

TO-220F

1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature

Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds TC 25 C TC 100 C TC 100 C TC 25 C TC 100 C

FGP7N60RUFD
600 20 14 7 21 12 60 41 16 -55 to 150 -55 to 150 300

Units
V V A A A A A W W C C C

Thermal Characteristics
Symbol
RJC(IGBT) RJC(DIODE) RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Typ.
----

Max.
3.0 4.2 62.5

Units
C/W C/W C/W

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FGPF7N60RUFD Rev. A