FJA13009

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FJA13009

FJA13009
High Voltage Switch Mode Applications
High Speed Switching Suitable for Switching Regulator and Motor Control

TO-3P

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value 700 400 9 12 24 6 130 150 - 65 150 Units V V V A A A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol VCEO(sus) IEBO hFE VCE(sat) Parameter Collector-Emitter Sustaining Voltage Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC 10mA, IB 0 VEB 7V, IC 0 VCE 5V, IC 5A VCE 5V, IC 8A IC 5A, IB 1A IC 8A, IB 1.6A IC 12A, IB 3A IC 5A, IB 1A IC 8A, IB 1.6A VCB 10V , f 0.1MHz VCE 10V, IC 0.5A VCC 125V, IC 8A IB1 - IB2 1.6A RL 15,6 4 1.1 3 0.7 180 8 6 Min. 400 Typ. Max. 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz s s s Units V mA

VBE(sat) Cob fT tON tSTG tF

Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time

Pulse test: PW300 s, Duty cycle2% Pulse

2003 Fairchild Semiconductor Corporation

Rev. A, May 2003