FJA3835

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FJA3835

FJA3835
Power Amplifier
High Current Capability : IC 8A High Power Dissipation Wide S.O.A

1

TO-3P

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol
VCBO VCEO VEBO IC ICP PC TJ TSTG

Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

Value 200 120 8 8 16 80 150 - 55 150

Units V V V A A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tF tSTG
Pulse Test : PW 20 s

Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
DC

Test Condition IC 5mA, IE 0 IC 10mA, RBE IE 5mA, IC 0 VCB 80V, IE 0 VEB 4V, IC 0 VCE 4V, IC 3A IC 3A, IB 0.3A IC 3A, IB 0.3A VCE 5V, IC 1A VCB 10V, f 1MHz VCC 20V, IC 1A 10IB1 -10IB2 RL 20

Min. 200 120 8

Typ.

Max.

Units V V V

0.1 0.1 120 250 0.5 1.2 30 210 0.26 0.68 6.68

mA mA V V MHz pF s s s

Current Gain

Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Fall Time Storage Time

2003 Fairchild Semiconductor Corporation

Rev. A, December 2003

FJA3835 Datasheet Fairchild Download PDF

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FJA3835 DATASHEET