FJA4213

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FJA4213

FJA4213
Audio Power Amplifier
High Current Capability IC -15A High Power Dissipation Wide S.O.A Complement to FJA4313
1

TO-3P

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Ratings -230 -230 -5 -15 -1.5 130 150 - 50 150 Units V V V A A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC -5mA, IE 0 IC -10mA, RBE IE -5mA, IC 0 VCB -230V, IE 0 VEB -5V, IC 0 VCE -5V, IC -1A VCE -5V, IC -7A IC -8A, IB -0.8A VCE -5V, IC -7A VCE -5V, IC -1A VCB -10V, f 1MHz 55 35 60 -0.4 -1.0 30 360 -3.0 -1.5 V V MHz pF Min. -230 -230 -5 -5.0 -5.0 160 Typ. Max. Units V V V A A

Pulse Test : PW 20us

hFE Classification
Classification hFE1 R 55 110 O 80 160

2003 Fairchild Semiconductor Corporation

Rev. A, March 2003