FJAF4210

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FJAF4210

FJAF4210
Audio Power Amplifier
High Current Capability : IC -10A High Power Dissipation Wide S.O.A Complement to FJAF4310
1

TO-3PF 1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol
VCBO VCEO VEBO IC IB PC

Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (DC) Collector Dissipation (TC 25 C) Junction to Case Junction Temperature Storage Temperature

Value -200 -140 -6 -10 -1.5 80 1.33 150 - 55 150

Units V V V A A W C/W C C

RJC
TJ TSTG

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Cob fT
Pulse Test : PW 20 s

Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current
DC

Test Condition IC -5mA, IE 0 IC -50mA, RBE IE -5mA, IC 0 VCB -200V, IE 0 VEB -6V, IC 0 VCE -4V, IC -3A IC -5A, IB -0.5A VCB -10V, f 1MHz VCE -5V, IC -1A

Min. -200 -140 -6

Typ.

Max.

Units V V V

-10 -10 50 400 30 180 -0.5

A A V pF MHz

Current Gain

Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product

hFE Classification
Classification hFE R 50 100 O 70 140 Y 90 180

2002 Fairchild Semiconductor Corporation

Rev. A, November 2002

FJAF4210 Datasheet Fairchild Download PDF

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FJAF4210 DATASHEET