FJAF6810D

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FJAF6810D

FJAF6810D
High Voltage Color Display Horizontal Deflection Output (Damper Diode Built-In)
High Collector-Base Breakdown Voltage : BVCBO 1500V High Switching Speed : tF(typ.) 0.1 s For Color TV TO-3PF 1 1.Base 2.Collector 3.Emitter
Equivalent Circuit C

NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature

35 typ. E

Rating 1500 750 6 10 20 60 150 -55 150

Units V V V A A W C C

Pulse Test: Pulse Width 5ms, Duty Cycle 10%

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) VF tSTG tF Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB 1500V, RBE 0 VCB 800V, IE 0 VEB 4V, IC 0 IE 300mA, IC 0 VCE 5V, IC 1A VCE 5V, IC 6A IC 6A, IB 1.5A IC 6A, IB 1.5A IF 6A VCC 200V, IC 6A, RL 33 IB1 1.2A, IB2 - 2.4A 40 6 7 5 8 3 1.5 2 3 0.2 V V V s s Min Typ Max 1 10 250 Units mA A mA V

Pulse Test: PW 20 s, duty Cycle 1% Pulsed

Thermal Characteristics TC 25 C unless otherwise noted
Symbol RjC Parameter Thermal Resistance, Junction to Case Typ Max 2.08 Units C/W

2001 Fairchild Semiconductor Corporation

Rev. B, August 2001