FJAF6812

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FJAF6812

FJAF6812
High Voltage Color Display Horizontal Deflection Output
High Collector-Base Breakdown Voltage : BVCBO 1500V High Switching Speed : tF(typ.) 0.1 s For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1500 750 6 12 24 60 150 -55 150 Units V V V A A W C C

Pulse Test: PW 300 s, duty Cycle 2% Pulsed

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG tF Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB 1400V, RBE 0 VCB 800V, IE 0 VEB 4V, IC 0 IE 500 A, IC 0 VCE 5V, IC 1A VCE 5V, IC 8A IC 8A, IB 2A IC 8A, IB 2A VCC 200V, IC 7A, RL 30 IB1 1.4A, IB2 - 2.8A 6 10 5 40 8 3 1.5 3 0.2 V V s s Min Typ Max 1 10 1 Units mA A mA V

Pulse Test: PW 20 s, duty Cycle 1% Pulsed

Thermal Characteristics TC 25 C unless otherwise noted
Symbol RjC Parameter Thermal Resistance, Junction to Case Typ 1.4 Max 2.08 Units C/W

2001 Fairchild Semiconductor Corporation

Rev. B1, May 2001