FJAF6910

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FJAF6910

FJAF6910
High Voltage Color Display Horizontal Deflection Output
High Collector-Base Breakdown Voltage : BVCBO 1700V Low Saturation Voltage : VCE(sat) 3V (Max.) High Switching Speed : tF(typ.) 0.15 s For Color Monitor
1

TO-3PF 2.Collector 3.Emitter

1.Base

NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Rating 1700 800 6 10 20 60 150 -55 150 Units V V V A A W C C

Pulse Test: Pulse Width 5ms, Duty Cycle 10%

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICES ICBO IEBO BVCBO BVCEO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG tF Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB 1400V, RBE 0 VCB 800V, IE 0 VEB 4V, IC 0 IC 500 A, IE 0 IC 5mA, IB 0 IE 500 A, IC 0 VCE 5V, IC 1A VCE 5V, IC 6A IC 6A, IB 1.5A IC 6A, IB 1.5A VCC 200V, IC 6A, RL 33 IB1 1.2A, IB2 - 2.4A 1700 800 6 10 7 10 3 1.5 4 0.3 V V s s Min Typ Max 1 10 1 Units mA A mA V V V

Pulse Test: PW 20 s, duty Cycle 1% Pulsed

Thermal Characteristics TC 25 C unless otherwise noted
Symbol RjC Parameter Thermal Resistance, Junction to Case Typ Max 2.08 Units C/W

2001 Fairchild Semiconductor Corporation

Rev. A, July 2001