FJB102 High Voltage Power Darlington Transistor

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FJB102 High Voltage Power Darlington Transistor

FJB102
High Voltage Power Darlington Transistor Features
High DC Current Gain : hFE 1000 VCE 4V, IC 3A (Min.) Low Collector-Emitter Saturation Voltage High Collector-Emitter Sustaining Voltage Monolithic Construction with Built-in Base-Emitter Shunt Resistors Industrial Use

Equivalent Circuit C

B

1 1.Base

D2-PAK 2.Collector 3.Emitter

R1

R2 E

R1 10k R2 0.6k

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC ICP IB PC TJ TSTG

Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

Value
100 100 5 8 15 1 80 150 -65 150

Units
V V V A A A W C C

Pulse Test: PW 300 s, Duty Cycle 2% Pulsed

Package Marking and Ordering Information
Device Marking
FJB102

Device
FJB102

Package
D2-PAK

Reel Size
13" Dia

Tape Width
-

Quantity
800

2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FJB102 Rev. A

FJB102 Datasheet Fairchild Download PDF

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FJB102 DATASHEET