FJC1308

FJC1308 PNP Epitaxial Silicon Transistor

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FJC1308 PNP Epitaxial Silicon Transistor

July 2005

FJC1308
PNP Epitaxial Silicon Transistor
Audio Power Amplifier Applications
Complement to FJC1963 High Collector Current Low Collector-Emitter Saturation Voltage

Marking

1 3 P Y
1

0 8 W W
Weekly code Year code hFE grage

SOT-89

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

TC 25 C unless otherwise noted

Parameter

Value
-30 -30 -6 -3 0.5 150 - 55 150

Units
V V V A W C C

Power Dissipation(TC 25 C) Junction Temperature Storage Temperature
C

Electrical Characteristics T
Symbol
BVCBO BVCEO BVEBO ICEO IEBO hFE VCE(sat) VBE(sat)

25 C unless otherwise noted

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Test Condition
IC -50 A, IE 0 IC -1mA, IB 0 IE -50 A, IC 0 VCE -20V, VB 0 VEB -5V, IC 0 VCE -2V, IC -0.5A IC -1.5, IB -0.15A IC -1.5, IB -0.15A

Min.
-30 -30 -6

Max.

Units
V V V

-0.5 -0.5 80 390 -0.45 -1.5

A A V V

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJC1308 Rev. B1