FJC1386

FJC1386 PNP Epitaxial Silicon Transistor

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FJC1386 PNP Epitaxial Silicon Transistor

July 2005

FJC1386
PNP Epitaxial Silicon Transistor
Low Saturation Transistor Medium Power Amplifier
Complement to FJC2098 High Collector Current Low Collector-Emitter Saturation Voltage

Marking

1 3 P Y
1

8 6 W W
Weekly code Year code hFE grage

SOT-89

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

Ta 25 C unless otherwise noted

Parameter

Value
-30 -20 -6 -5 0.5 150 -55 to 150

Units
V V V A W C C

Power Dissipation (Ta 25 C) Junction Temperature Storage Temperature
a

Electrical Characteristics T
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat)

25 C unless otherwise noted

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Test Condition
IC -50 A, IE 0 IC -1mA, IB 0 IE -50 A, IC 0 VCB -20V, VB 0 VEB -5V, IC 0 VCE -2V, IC -0.5A IC -4A, IB -0.1A IC -4A, IB -0.1A

Min.
-30 -20 -6

Max.

Units
V V V

-0.5 -0.5 80 390 -1.0 -1.5

A A V V

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJC1386 Rev. C1