FJC1963

FJC1963 NPN Epitaxial Silicon Transistor

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FJC1963 NPN Epitaxial Silicon Transistor

July 2005

FJC1963
NPN Epitaxial Silicon Transistor
Audio Power Amplifier Applications
Complement to FJC1308 High Collector Current Low Collector-Emitter Saturation Voltage

Marking

1 9 P Y
1

6 3 W W
Weekly code Year code hFE grage

SOT-89

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

TC 25 C unless otherwise noted

Parameter

Value
50 30 6 3 0.5 150 - 55 150

Units
V V V A W C C

Power Dissipation(TC 25 C) Junction Temperature Storage Temperature

Electrical Characteristics T 25 C unless otherwise noted
C

Symbol
BVCBO BVCEO BVEBO ICEO IEBO hFE VCE(sat) VBE(sat)

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Test Condition
IC 50 A, IE 0 IC 1mA, IB 0 IE 50 A, IC 0 VCE 40V, VB 0 VEB 5V, IC 0 VCE 2V, IC 0.5A IC 1.5, IB 0.15A IC 1.5, IB 0.15A

Min.
50 30 6

Max.

Units
V V V

0.5 0.5 120 560 0.45 1.2

A A V V

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJC1963 Rev. B1