FJC690

FJC690 NPN Epitaxial Silicon Transistor

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FJC690 NPN Epitaxial Silicon Transistor

September 2005

FJC690
NPN Epitaxial Silicon Transistor
Camera Strobe Flash Application
Complement to FJC790 High Collector Current Low Collector-Emitter Saturation Voltage

Marking

6 9 Y
1

0 W W
Weekly code Year code hFE

SOT-89

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Junction Temperature Storage Temperature

Ta 25 C unless otherwise noted

Parameter

Value
45 45 5 2 0.5 150 - 55 150

Units
V V V A W C C

Electrical Characteristics T
Symbol
BVCBO BVCEO BVEBO ICEO IEBO hFE

25 C unless otherwise noted

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Test Condition
IC 100 A, IE 0 IC 10mA, IB 0 IE 100 A, IC 0 VCE 35V, VB 0 VEB 4V, IC 0 VCE 2V, IC 100mA VCE 2V, IC 1A VCE 2V, IC 2A IC 0.1A, IB 0.5mA IC 1A, IB 5mA IC 1A, IB 10mA VCE 2V, IC 1A VCB 10V, IE 0, f 1MHz

Min.
45 45 5

Typ.

Max.

Units
V V V A A

0.1 0.1 500 400 150 80 300 0.9 0.85 20

VCE(sat) VBE(sat) VBE(on) COB

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance

mV mV V V pF

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJC690 Rev. C