FJC790 PNP Epitaxial Silicon Transistor

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FJC790 PNP Epitaxial Silicon Transistor

September 2005

FJC790
PNP Epitaxial Silicon Transistor
Camera Strobe Flash Application
Complement to FJC690 High Collector Current Low Collector-Emitter Saturation Voltage

Marking

7 9 Y
1

0 W W
Weekly code Year code hFE

SOT-89

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Junction Temperature Storage Temperature
a

Ta 25 C unless otherwise noted

Parameter

Value
-50 -40 -5 -2 0.5 150 - 55 150

Units
V V V A W C C

Electrical Characteristics T
Symbol
BVCBO BVCEO BVEBO ICEO IEBO hFE

25 C unless otherwise noted

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Test Condition
IC -100 A, IE 0 IC -10mA, IB 0 IE -100 A, IC 0 VCE -35V, VB 0 VEB -4V, IC 0 VCE -2V, IC -10mA VCE -2V, IC -500mA VCE -2V, IC -1A VCE -2V, IC -2A IC -0.5A, IB -5mA IC -1A, IB -10mA IC -2A, IB -50mA IC -1A, IB -10mA VCE -2V, IC 1A VCB -10V, IE 0, f 1MHz 1

Min.
-50 -40 -5

Typ.

Max.

Units
V V V A A

-0.1 -0.1 300 250 200 150 800

VCE(sat)

Collector-Emitter Saturation Voltage

-250 -350 -450 -0.9 -0.8 20

mV mV mV V V pF

VBE(sat) VBE(on) COB

Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJC790 Rev. C

FJC790 Datasheet Fairchild Download PDF

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FJC790 DATASHEET