FJD3076

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FJD3076

FJD3076
Power Amplifier Applications
Low Collector-Emitter Saturation Voltage

D-PACK

1. Base 2. Collector 3. Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value 40 32 5 2 1 10 150 - 55 150 Units V V V A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC 1mA, IB 0 IC 50 A IE 50 A VCB 20V, IE 0 VEB 4V, IC 0 VCE 3V, IC 0.5A IC 2A, IB 0.2A VCE 5V, IE -0.5A, f 100MHz VCB 10V, IE 0A, f 1MHz 130 0.5 100 50 Min. 32 40 5 1 1 390 0.8 V MHz pF Typ. Max. Units V V V A A

2001 Fairchild Semiconductor Corporation

Rev. C1, December 2001