FJD5304D High Voltage Fast Switching Transistor

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FJD5304D High Voltage Fast Switching Transistor

FJD5304D
High Voltage Fast Switching Transistor Features
Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application

Equivalent Circuit C

B

1

D-PACK
E

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse)

TC 25 C unless otherwise noted

Parameter

Value
700 400 12 4 8 2 4 30 150 -55 150

Units
V V V A A A A W C C

Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

Pulse Test: PW 300 s, Duty Cycle 2% Pulsed

Package Marking and Ordering Information
Device Marking
J5304D J5304D

Device
FJD5304DTM FJD5304DTF

Package
D-PAK D-PAK

Reel Size
13" Dia 13" Dia

Tape Width
-

Quantity
2500 2000

2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FJD5304D Rev. A

FJD5304D Datasheet Fairchild Download PDF

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FJD5304D DATASHEET