FJE5304D

FJE5304D NPN Triple Diffused Planar Silicon Transistor

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FJE5304D NPN Triple Diffused Planar Silicon Transistor

FJE5304D
NPN Triple Diffused Planar Silicon Transistor
High Voltage High Speed Power Switch Application
Wide Safe Operating Area Built-in Free Wheeling diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Equivalent Circuit C

TO-126 2.Collector 3.Base
E

1.Emitter

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC ICP IB IBP PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse)

TC 25 C unless otherwise noted

Parameter

Value
700 400 12 4 8 2 4 30 - 65 150

Units
V V V A A A A W C

Collector Dissipation (TC 25 C) Storage Temperature

Pulse Test Pulse Width 5ms, Duty Cycle 1.0%

Electrical Characteristics T
Symbol
BVCBO BVCEO BVEBO ICES ICEO IEBO hFE

25 C unless otherwise noted

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Test Condition
IC 1mA, IE 0 IC 5mA, IB 0 IE 1mA, IC 0 VCE 700V, VEB 0 VCE 400V, IB 0 VEB 12V, IC 0 VCE 5V, IC 10mA VCE 5V, IC 2A

Min.
700 400 12

Typ.

Max.

Units
V V V

100 250 100 10 8 40

A A A

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJE5304D Rev. B1