FJL4315
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FJL4315
FJL4315
Audio Power Amplifier
High Current Capability : IC 15A High Power Dissipation Wide S.O.A Complement to FJL4215 TO-264
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value 230 230 5 15 1.5 150 150 - 50 150 Units V V V A A W C C
Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob
Pulse Test : PW 20us
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance
Test Condition IC 5mA, IE 0 IC 10mA, RBE IE 5mA, IC 0 VCB 230V, IE 0 VEB 5V, IC 0 VCE 5V, IC 1A VCE 5V, IC 7A IC 8A, IB 0.8A VCE 5V, IC 7A VCE 5V, IC 1A VCB 10V, f 1MHz
Min. 230 230 5
Typ.
Max.
Units V V V
5.0 5.0 55 35 60 0.4 1.0 30 200 3.0 1.5 160
uA uA
V V MHz pF
hFE Classification
Classification hFE1 R 55 110 O 80 160
2003 Fairchild Semiconductor Corporation
Rev. B, March 2003
FJL4315 Datasheet Fairchild Download PDF
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