FJN13003

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FJN13003

FJN13003
High Voltage Switch Mode Application
High Speed Switching Suitable for Electronic Ballast up to 21W

TO-92

1. Emitter 2. Collector 3.Base

NPN Silicon Transistor Planar Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Collector Power Dissipation(Ta 25 C) Junction Temperature Storage Temperature Value 700 400 9 1.5 3 0.75 1.5 1.1 150 - 65 150 Units V V V A A A A W C C

Pulse Test: Pulse Width 5ms, Duty Cycle 10%

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO IEBO hFE VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC 500 A, IE 0 IC 5mA, IB 0 IE 500 A, IC 0 VEB 9V, IC 0 VCE 2V, IC 0.5A VCE 2V, IC 1.0A IC 0.5A, IB 0.1A IC 1.0A, IB 0.25A IC 1.5A, IB 0.5A VBE (sat) fT tON tSTG tF Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time IC 0.5A, IB 0.1A IC 1.0A, IB 0.25A VCE 10V, IC 0.1A VCC 125V, IC 1A, IB1 0.2A, IB2 -0.2A, RL 125 4 1.1 4.0 0.7 9 5 0.5 1.0 3.0 1.0 1.2 V V V V V MHz s s s Min. 700 400 9 10 21 Typ. Max. Units V V V A

2001 Fairchild Semiconductor Corporation

Rev. A, July 2001