FJN3312R

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FJN3312R

FJN3312R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R 47K) Complement to FJN4312R

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 40 40 5 100 300 150 -55 150 Units V V V mA mW C C
E R B Equivalent Circuit C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE (sat) Cob fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC 100 A, IE 0 IE 1mA, IB 0 VCB 30V, IE 0 VCE 5V, IC 1mA IC 10mA, IB 1mA VCB 10V, IE 0 f 1MHz VCE 10V, IC 5mA 32 3.7 250 47 62 100 Min. 40 40 0.1 600 0.3 V pF MHz K Typ. Max. Units V V A

2002 Fairchild Semiconductor Corporation

Rev. A, August 2002