FJN3313R

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FJN3313R

FJN3313R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 2.2K, R2 47K) Complement to FJN4313R

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 300 150 -55 150 Units V V V mA mW C C
E B R2 Equivalent Circuit C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE (sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC 10 A, IE 0 IC 100 A, IB 0 VCB 40V, IE 0 VCE 5V, IC 5mA IC 10mA, IB 0.5mA VCE 10V, IC 5mA VCB 10V, IE 0 f 1.0MHz VCE 5V, IC 100 A VCE 0.2V, IC 5mA 1.5 0.042 2.2 0.047 0.5 1.1 2.9 0.052 250 3.7 68 0.3 V MHz pF V V K Min. 50 50 0.1 Typ. Max. Units V V A

2002 Fairchild Semiconductor Corporation

Rev. A, August 2002