FJN4301R

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FJN4301R

FJN4301R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 4.7K, R2 4.7K) Complement to FJN3301R

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -50 -10 -100 300 150 -55 150 Units V V V mA mW C C
E R2 B Equivalent Circuit C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC -10 A, IE 0 IC -100 A, IB 0 VCB -40V, IE 0 VCE -5V, IC -10mA IC -10mA, IB -0.5mA VCE -10V, IC -5mA VCB -10V, IE 0 f 1.0MHz VCE -5V, IC -100 A VCE -0.3V, IC -20mA 3.2 0.9 4.7 1 -0.5 -3 6.2 1.1 200 5.5 20 -0.3 V MHz pF V V K Min. -50 -50 -0.1 Typ. Max. Units V V A

2002 Fairchild Semiconductor Corporation

Rev. A, July 2002