FJN4307R

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FJN4307R

FJN4307R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 22K, R2 47K) Complement to FJN3307R

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -50 -10 -100 300 150 -55 150 Units V V V mA mW C C
E R2 B Equivalent Circuit C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE(sat) Cob fT VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC -10 A, IE 0 IC -100 A, IB 0 VCB -40V, IE 0 VCE -5V, IC -5mA IC -10mA, IB -0.5mA VCB -10V, IE 0 f 1MHz VCE -10V, IC -5mA VCE -5V, IC -100 A VCE -0.3V, IC -2mA 15 0.42 22 0.47 -0.4 -2.5 29 0.52 5.5 200 68 -0.3 V pF MHz V V K Min. -50 -50 -0.1 Typ. Max. Units V V A

2002 Fairchild Semiconductor Corporation

Rev. A, August 2002