FJN4310R

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FJN4310R

FJN4310R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R 10K) Complement to FJN3310R

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -40 -5 -100 300 150 -55 150 Units V V V mA mW C C
E R B Equivalent Circuit C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE (sat) Cob fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC -100 A, IE 0 IE -1mA, IB 0 VCB -30V, IE 0 VCE -5V, IC -1mA IC -10mA, IB -1mA VCB -10V, IE 0 f 1MHz VCE -10V, IC -5mA 7 5.5 200 10 13 100 Min. -40 -40 -0.1 600 -0.3 V pF MHz K Typ. Max. Units V V A

2002 Fairchild Semiconductor Corporation

Rev. A, August 2002