FJN5471

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FJN5471

FJN5471
For Output Amplifier of Electronic Flash Unit
High DC Currrent Gain Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings 40 20 7 5 0.75 150 -55 150 Units V V V A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Emitter Voltage Emitter Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Band Width Product Collector Output Capacitance Test Condition IC 1mA, IB 0 IC 100 A, IC 0 VCB 10V, IE 0 VEB 7V, IC 0 VCE 2V, IC 0.5A IC 3A, IB 0.1A IC 3A, IB 0.1A VCE 6V, IC 50mA VCB 20V, IE 0, f 1MHz 150 25 700 1000 0.5 1.5 V V MHz pF Min. 20 7 0.1 0.1 Typ. Max. Units V V A A

Thermal Characteristics TC 25 C unless otherwise noted
Symbol RjA Parameter Thermal Resistance, Junction to Ambient Max 165 Units C/W

2002 Fairchild Semiconductor Corporation

Rev. A1, August 2002