FLLD261

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FLLD261
HIGH CONDUCTANCE LOW LEAKAGE DIODE
PD . . . .350 mW TA 25 Deg C BV . . . .200 V (MIN) IR 5 uA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature -55 to 150 Degrees C -55 to 150 Degrees C PACKAGE TO-236AB (Low)

P8A
1 2
CONNECTION DIAGRAMS
3

POWER DISSIPATION (NOTES 2 3) Total Device Dissipation at TA 25 Deg C Derating Factor per Degree C

350 mW 2.8 mW
1 2

VOLTAGES CURRENTS WIV Working Inverse Voltage IO Average Rectified Current IF DC Forward Current if Recurrent Peak Forward Current if (surge) Peak Forward Surge Current Pulse width 1 second Pulse width 1 microsec

100 V 250 mA 600 mA 700 mA 1.0 A 3.0 A

ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)

SYM BV IR VF
CT TRR TFR VFM

CHARACTERISTICS
Breakdown Voltage Reverse Voltage Leakage Current Forward Voltage Diode Capacitance Reverse Recovery Time Forward Recovery Time Peak Forward Voltage

MIN
200

MAX

UNITS
V

TEST CONDITIONS
IR 5.0 uA TA 150 Deg C

5.0 5.0 1.40 4.0 400 10 0.9 Typ

nA uA V pF ns ns V

VR 100 V VR 100 V IF VR 200 mA 1.0 V

f 1.0 MHZ

IF IR 50 to 400 mA IRR 10% I R RL 100 ohms IF 10 mA

IF 10 mA Rise Time 5 ns /-20%

NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.