FMB100

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FMB100

FMB100
C2 E1 C1

B2 E2
pin 1

B1

SuperSOT-6
Mark: .NA
Dot denotes pin 1

NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage

TA 25 C unless otherwise noted

Parameter

Value
45 75 6.0 500 -55 to 150

Units
V V V mA C

4

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient

Max
FMB100 700 5.6 180

Units
mW mW/ C C/W

1998 Fairchild Semiconductor Corporation

FMB100 Datasheet Fairchild Download PDF

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FMB100 DATASHEET