FMB200

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FMB200

FMB200
C2 E1 C1

B2 E2
pin 1 B1

SuperSOT-6
Mark: .N2
Dot denotes pin 1

PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage

TA 25 C unless otherwise noted

Parameter

Value
45 60 6.0 500 -55 to 150

Units
V V V mA C

4

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient

Max
FMB200 700 5.6 180

Units
mW mW/ C C/W

1998 Fairchild Semiconductor Corporation

FMB200 Datasheet Fairchild Download PDF

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FMB200 DATASHEET