FMB2227A

FFB2227A / FMB2227A

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FFB2227A / FMB2227A

FFB2227A
E2 B2 C1
TRANSISTOR TYPE C1 B1 E1 C2 B2 E2 NPN PNP

FMB2227A
C2 E1 C1

SC70-6
Mark: .AA
Dot denotes pin 1 pin 1

C2 B1 E1 B2

SuperSOT-6
Mark: .001
Dot denotes pin 1

E2
pin 1 B1

NPN PNP General Purpose Amplifier
This complementary device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage

TA 25 C unless otherwise noted

Parameter

Value
30 60 5.0 500 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient FFB2227A 300 2.4 415

Max
FMB2227A 700 5.6 180

Units
mW mW/ C C/W

1998 Fairchild Semiconductor Corporation