FMB5551

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FMB5551

FMB5551
NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package
This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from process 16. See MMBT5551 for characteristics.
C2 E1 C1

B2 E2 pin 1 B1

SuperSOTTM-6
Mark: .3S Dot denotes pin 1

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC PC TJ TSTG RJA Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Value 160 180 6 600 0.7 150 - 55 150 180 Units V V V mA W C C C/W

Pd total, for both transistors. For each transistor, Pd 350mW.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Condition IC 1mA IC 10 A IE 10 A VCB 120V VCB 120V, T 100 C VEB 4V VCE 5V, IC 1mA VCE 5V, IC 10mA VCE 5V, IC 50mA IC 10mA, IB 1mA IC 50mA, IB 5mA IC 10mA, IB 1mA IC 50mA, IB 5mA VCB 10V, f 1MHz VCB 0.5V, f 1MHz VCE 10V, IC 10mA f 100MHz VCE 5V, IC 200 A f 1MHz, RS 2k, B 200Hz VCE 10V, IC 1mA f 1KHz 50 100 80 80 30 Min. 160 180 6 50 50 50 Typ. Max. Units V V V nA A nA Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

On Characteristics 250 0.15 0.2 1 1 TYPICAL 6 20 300 8 250 pF pF MHz dB V V

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Small Signal Characteristics Cob Cib fT NF hFE Output Capacitance Input Capacitance Current gain Bandwidth Product Noise Figure Small Signal Current Gain

2004 Fairchild Semiconductor Corporation

Rev. A1, August 2004