FMBA14

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FMBA14

FMBA14
C2 E1 C1

B2 E2
pin 1 B1

SuperSOT-6
Mark: .1N
Dot denotes pin 1

NPN Multi-Chip Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.

Absolute Maximum Ratings
Symbol
VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
30 30 10 1.2 -55 to 150

Units
V V V A C

4

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient

Max
FMBA14 700 5.6 180

Units
mW mW/ C C/W

1998 Fairchild Semiconductor Corporation

FMBA14 Datasheet Fairchild Download PDF

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FMBA14 DATASHEET