FMBM5401

FMBM5401 PNP General Purpose Amplifier

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FMBM5401 PNP General Purpose Amplifier

FMBM5401
PNP General Purpose Amplifier
This device has matched dies in SuperSOT-6.

C2 E1 C1

B2 E2 pin 1 B1

SuperSOTTM-6
Mark: .4S2

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, TSTG
Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

Value
-150 -160 -5.0 -600 -55 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.

Electrical Characteristics
Symbol
Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE1 DIVID1 hFE2 DIVID2 hFE3 DIVID3

TC 25 C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current

Conditions
IC -1.0mA, IB 0 IC -100 A, IE 0 IC -10 A, IC 0 VCB -120V, IE 0 VCB -120V, IE 0, Ta 100 C VEB -3.0V, IC 0 VCE -5V, IC -1mA hFE1(Die1)/hFE1(Die2) VCE -5V, IC -10mA hFE2(Die1)/hFE2(Die2) VCE -5V, IC -50mA hFE3(Die1)/hFE3(Die2)

Min.
-150 -160 -5.0

Max

Units
V V V

-50 -50 -50

nA A nA

On Characteristics DC Current Gain Variation Ratio of hFE1 Between Die 1 and Die 2 DC Current Gain Variation Ratio of hFE2 Between Die 1 and Die 2 DC Current Gain Variation Ratio of hFE3 Between Die 1 and Die 2 50 0.9 60 0.95 50 0.9 1.1 1.1 240 1.05

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FMBM5401 Rev. A