FMBM5551

FMBM5551 NPN General Purpose Amplifier

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FMBM5551 NPN General Purpose Amplifier

April 2005

FMBM5551
NPN General Purpose Amplifier
This device has matched dies Sourced from process 16. See MMBT5551 for characteristics

C2 E1 C1

B2 E2 pin 1 B1

Mark: .3S2 Dot denotes pin 1

SuperSOTTM-6

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC PC TJ TSTG TJA

Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient

Value
160 180 6 600 0.7 150 -55 150 180

Units
V V V mA W C C C/W

Pd total, for both transistors. For each transistor, Pd 350mW

Electrical Characteristics
Symbol
Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE1 DIVID1 hFE2 DIVID2 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

TC 25 C unless otherwise noted

Parameter

Conditions
IC 1mA, IB 0 IC 100 A, IE 0 IC 10 A, IC 0 VCB 120V VCB 120V, Ta 100 C VEB 4V VCE 5V, IC 1mA hFE1(Die1)/hFE1(Die2) VCE 5V, IC 10mA hFE2(Die1)/hFE2(Die2)

Min.
160 180 6

Max

Units
V V V

50 50 50 80 0.9 80 0.95 1.1 250 1.05

nA A nA

On Characteristics Variation Ratio of hFE1 Between Die 1 and Die 2 DC Current Gain Variation Ratio of hFE2 Between Die 1 and Die 2

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FMBM5551 Rev. D