FMBS5401

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FMBS5401

FMBS5401
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch for applications requiring high voltage.
E NC C1

B C pin 1 C

SuperSOTTM-6 single
Mark: .4S1

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -150 -160 -5.0 -600 -55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Condition IC -1.0mA, IB 0 IC -100 A, IE 0 IE -10 A, IC 0 VCB -120V, IE 0 VCB -120V, IE 0, Ta 100 C VEB -3.0V, IC 0 IC -1.0mA, VCE -5.0V IC -10mA, VCE -5.0V IC -50mA, VCE -5.0V IC -10mA, IB -1.0mA IC -50mA, IB -5.0mA IC -10mA, IB -1.0mA IC -50mA, IB -5.0mA IC -10mA, VCE -10V, f 100MHz VCB -10V, IE 0, f 1MHz IC -250 A, VCE -5.0V, RS 1.0K f 10Hz to 15.7KHz 100 50 60 50 Min. -150 -160 -5.0 -50 -50 -50 Max. Units V V V nA A nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain

On Characteristics 240 -0.2 -0.5 -1.0 -1.0 300 6.0 8.0 V V V V MHz pF dB

VCE (sat) VBE (sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Small Signal Characterics fT Cob NF Current Gain Bandwidth Product Output Capacitance Noise Figure

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

2004 Fairchild Semiconductor Corporation

Rev. A, Octorber 2004

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FMBS5401 DATASHEET