FMBS549

FMBS549 PNP Low Saturation Transistor

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FMBS549 PNP Low Saturation Transistor

August 2006

FMBS549
PNP Low Saturation Transistor
Features
ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. Sourced from process PB.

NC C1 E

B C pin 1 C

SuperSOTTM-6 single
Mark: .S1

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

Ta 25 C unless otherwise noted

Parameter

Value
-30 -35 -5 -1 -2 150 - 55 150

Unit
V V V A A C C

Collector Current - Continuous - Peak Pulse Current Junction Temperature Storage Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics
Symbol
PD RJA

Parameter
Total Device Dissipation, by RJA Thermal Resistance, Junction to Ambient

Value
700 180

Unit
mW C/W

Device mounted on a 1 in2 pad of 2 oz copper.

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FMBS549 Rev. B