FMBS5551

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FMBS5551

FMBS5551
NPN General Purpose Amplifier
This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
C1 E NC

B C pin 1 C

SuperSOTTM-6 single
Mark: .3S1

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 160 180 6.0 600 - 55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC 1.0mA, IB 0 IC 100 A, IE 0 IE 10 A, IC 0 VCB 120V, IE 0 VCB 120V, IE 0, Ta 100 C VEB 4.0V, IC 0 IC 1.0mA, VCE 5.0V IC 10mA, VCE 5.0V IC 50mA, VCE 5.0V IC 10mA, IB 1.0mA IC 50mA, IB 5.0mA IC 10mA, IB 1.0mA IC 50mA, IB 5.0mA IC 10mA, VCE 10, f 100MHz VCE 10V, IC 0, f 1.0MHz VBE 0.5V, IC 0, f 1.0MHz IC 1.0mA, VCE 10V, f 1.0KHz IC 250 A, VCE 5.0V, RS 1.0K, f 10 Hz to 15.7KHz 50 100 80 80 30 Min. 160 180 6.0 50 50 50 Max. Units V V V nA A nA Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cut-off Current DC Current Gain

On Characteristics 250 0.15 0.2 1.0 1.0 300 6.0 20 250 8.0 dB V V

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Small Signal Characteristics fT Cobo Cibo hfe NF Current Gain Bandwidth Product Output Capacitance Input Capacitance Small Single Current Gain Noise Figure MHz pF pF

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

2004 Fairchild Semiconductor Corporation

Rev. A1, November 2004