FMBSA06

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FMBSA06

FMBSA06
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 12.
C1 E NC

B C pin 1 C

SuperSOTTM-6 single
Mark: .1G1

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 80 80 4.0 500 - 55 150 Units V V V mA C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics V(BR)CEO V(BR)EBO ICEO ICBO hFE VCE(sat) VBE(on) fT Parameter Test Condition IC 1.0mA, IB 0 IE 100 A, IC 0 VCE 60V, IB 0 VCB 80V, IE 0 IC 10mA, VCE 1.0V IC 100mA, VCE 1.0V IC 100mA, IB 10mA IC 10mA, VCE 1.0V IC 10mA, VCE 2.0V, f 100MHz 100 100 100 0.25 1.2 V V MHz Min. 80 4.0 0.1 0.1 Max. Units V V A A Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product

On Characteristics

Small Signal Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Thermal Characteristics Ta 25 C unless otherwise noted
Symbol PD RJA Parameter Total Device Dissipation Thermal Resistance, Junction to Ambient, total Max. 700 180 Units mW C/W

Device mounted on a 1 in 2 pad of 2 oz copper.

2004 Fairchild Semiconductor Corporation

Rev. A1, November 2004