FMG2G150US60E

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FMG2G150US60E

IGBT
FMG2G150US60E
Molding Type Module
General Description
Fairchild s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

Features
UL Certified No. E209204 Short Circuit rated 10us TC 100 C, VGE 15V High Speed Switching Low Saturation Voltage : VCE(sat) 2.2 V IC 150A High Input Impedance Fast Soft Anti-Parallel FWD

Package Code : 7PM-GA

E1/C2

Application
AC DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS
C1 E2

G1

E1

G2

E2

Internal Circuit Diagram

Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque

TC 25 C unless otherwise noted

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M6

TC 25 C TC 100 C TC 100 C TC 25 C

AC 1minute

FMG2G150US60E 600 20 150 300 150 300 10 500 -40 to 150 -40 to 125 2500 2.0 2.5

Units V V A A A A us W C C V N.m N.m

Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature

2002 Fairchild Semiconductor Corporation

FMG2G150US60E Rev. A

FMG2G150US60E Datasheet Fairchild Download PDF

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FMG2G150US60E DATASHEET