FPN430

FPN430 / FPN430A

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FPN430 / FPN430A

FPN430 FPN430A

TO-226
B E

PNP Low Saturation Transistor
These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter
Collector-Emitter Voltage

Value
30 35 5.0 2.0 -55 to 150

Units
V V V A C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max
FPN430 / FPN430A 1.0 50 125

Units
W C/W C/W

1999 Fairchild Semiconductor Corporation