FPN660/FPN660A

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FPN660/FPN660A

FPN660/FPN660A
PNP Low Saturation Transistor
These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. Sourced from process PA.
C BE

TO-226

Absolute Maximum Ratings TA 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range FPN660 60 80 5 3 -55 150 FPN660A 60 60 5 3 -55 150 Units V V V A C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltage (V) and currents (A) are negative polarity for PNP transistors

Electrical Characteristics TA 25 C unless otherwise noted
Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Conditions IC 10mA, IB 0 IE 100 A, IE 0 IE 100 A, IC 0 VCB 30V, IE 0 VCB 30V, IE 0, TA 100 C VEB 4.0V, IC 0 IC 100mA, VCE 2.0V IC 500mA, VCE 2.0V IC 1.0A, VCE 2.0V IC 2.0A, VCE 2.0V VCE(sat) Collector-Emitter Saturation Voltage IC 1.0A, IB 100mA IC 2.0A, IB 200mA IC 1.0A, IB 100mA IC 1.0A, VCE 2.0V VCB 10V, IE 0, f 1MHz IC 100mA, VCE 5.0V, f 100MHz 75 FPN660 FPN660A 70 100 250 80 40 FPN660 FPN660A Min. 55 80 60 5.0 100 10 100 Typ. Max. Units V V V V nA A nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain

On Characteristics FPN660 FPN660A 300 550

300 450 400 1.25 1.0 45

mV mV mV V V pF MHz

VBE(sat) VBE(on) Cobo fT

Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Transition Frequency

Small Signal Characteristics

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% NOTE: All voltage (V) and currents (A) are negative polarity for PNP transistors.

2002 Fairchild Semiconductor Corporation

Rev. A2, November 2002

FPN660 Datasheet Fairchild Download PDF

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FPN660 DATASHEET