FPNH10

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FPNH10

FPNH10

C

BE

TO-92

NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter

Value
25 30 3.0 50 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max
FPNH10 350 2.8 125 357

Units
mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2000 Fairchild Semiconductor Corporation

FPNH10 Rev. A

FPNH10 Datasheet Fairchild Download PDF

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FPNH10 DATASHEET