FQA13N50CF

FQA13N50CF 500V N-Channel MOSFET

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FQA13N50CF 500V N-Channel MOSFET

FRFET
FQA13N50CF
500V N-Channel MOSFET Features
15A, 500V, RDS(on) 0.48 VGS 10 V Low gate charge (typical 43 nC) Low Crss (typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode (typical 100ns)

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

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TO-3P
G D S
FQA Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC 25 C) - Continuous (TC 100 C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds (Note 2) (Note 1) (Note 1) (Note 3)

Parameter

FQA13N50CF
500 15 9.5 60 30 860 15 21.8 4.5 218 1.56 -55 to 150 300

Units
V A A A V mJ A mJ V/ns W W/ C C C

Thermal Characteristics
Symbol
RJC RJS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient

Typ
-0.24 --

Max
0.58 -40

Units
C/W C/W C/W

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FQA13N50CF Rev. A