FQAF19N60

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FQAF19N60

April 2000

QFET
FQAF19N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
11.2A, 600V, RDS(on) 0.38 VGS 10 V Low gate charge ( typical 70 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G G D S

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TO-3PF
FQAF Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQAF19N60 600 11.2 7.0 44.8 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ Vns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

1150 11.2 12 4.5 120 0.96 -55 to 150 300

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds

Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 1.04 40 Units CW CW

2000 Fairchild Semiconductor International

Rev. A, April 2000