FQAF9P25

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FQAF9P25

December 2000

QFET
FQAF9P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high a energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.

Features
-7.1A, -250V, RDS(on) 0.62 VGS -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 27 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G D S

TO-3PF
FQAF Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQAF9P25 -250 -7.1 -4.5 -28.4 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

650 -7.1 7.0 -5.5 70 0.56 -55 to 150 300

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 1.79 40 Units C/W C/W

2000 Fairchild Semiconductor International

Rev. A2, December 2000