FQD6N40C

FQD6N40C / FQU6N40C

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FQD6N40C / FQU6N40C

QFET
FQD6N40C / FQU6N40C
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

Features
4.5A, 400V, RDS(on) 1.0 VGS 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability

D D

D-PAK
FQD Series

I-PAK
G D S
FQU Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQD6N40C / FQU6N40C 400 4.5 2.7 18 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA 25 C) Power Dissipation (TC 25 C) - Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

270 4.5 4.8 4.5 2.5 48 0.38 -55 to 150 300

TJ, TSTG TL

Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient. Thermal Resistance, Junction-to-Ambient. Typ ---Max 2.6 50 110 Units C/W C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2003 Fairchild Semiconductor Corporation

Rev. A, October 2003