FQD6N60C

FQD6N60C 600V N-Channel MOSFET

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FQD6N60C 600V N-Channel MOSFET

QFET
FQD6N60C
600V N-Channel MOSFET
Features
4 A, 600 V, RDS(on) 2.0 VGS 10 V Low gate charge ( typical 16 nC ) Low Crss ( typical 7 pF) Fast switching 100 % avalanche tested Improved dv/dt capability

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

D D

D-PAK
FQD Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current

Parameter
Drain-Source Voltage - Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQD6N60C
600 4 2.4 16 30 300 4.0 8.0 4.5 80 0.78 -55 to 150 300

Units
V A A A V mJ A mJ V/ns W W/ C C C

Thermal Characteristics
Symbol
RJC RJA RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient

Typ
----

Max
1.56 50 110

Units
C/W C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FQD6N60C Rev. A