FQE10N20C

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FQE10N20C

QFET
FQE10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

Features
4.0A, 200V, RDS(on) 0.36 VGS 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

TO-126
GD S
FQE Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQE10N20C 200 4.0 2.5 16 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

320 4.0 1.28 5.5 12.8 0.10 -55 to 150 300

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 9.8 62.5 Units C/W C/W

2004 Fairchild Semiconductor Corporation

Rev. B, January 2004