FQH90N15

FQH90N15 / FQA90N15 N-Channel Power MOSFET

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FQH90N15 / FQA90N15 N-Channel Power MOSFET

FQH90N15 / FQA90N15
N-Channel Power MOSFET Features
90A, 150V, RDS(on) 0.018 VGS 10 V Low gate charge (typical 220 nC) Low Crss (typical 200 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175 C maximum junction temperature rating

QFET
Description

October 2006

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply.

G G D S

TO-247

FQH Series

TO-3P
G DS

FQA Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FQH90N15/FQA90N15
150 90 63.5 360 25 1400 90 37.5 6.0 375 2.5 -55 to 175 300

Unit
V A A A V mJ A mJ V/ns W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RCS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

Min.
-0.24 --

Max.
0.4 -40

Unit
C/W C/W C/W

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FQH90N15 / FQA90N15 Rev. C