FQI11P06

FQB11P06 / FQI11P06

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FQB11P06 / FQI11P06

QFET
FQB11P06 / FQI11P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features
-11.4A, -60V, RDS(on) 0.175 VGS -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175 C maximum junction temperature rating

D G

D2-PAK
FQB Series

I2-PAK
G D S
FQI Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQB11P06 / FQI11P06 -60 -11.4 -8.05 -45.6 25
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA 25 C)

160 -11.4 5.3 -7.0 3.13 53 0.35 -55 to 175 300

TJ, TSTG TL

Power Dissipation (TC 25 C) - Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Typ ---Max 2.85 40 62.5 Units C/W C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2004 Fairchild Semiconductor Corporation

Rev. B5, March 2004