FQI32N12V2

FQB32N12V2/FQI32N12V2

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FQB32N12V2/FQI32N12V2

QFET
FQB32N12V2/FQI32N12V2
120V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.

Features
32A, 120V, RDS(on) 0.05 VGS 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability

D D

D2-PAK
FQB Series

I2-PAK
G D S
FQI Series

"
" "

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQB32N12V2/FQI32N12V2 120 32 23 128 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA 25 C) Power Dissipation (TC 25 C) - Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

439 32 15 4.5 3.75 150 1 -55 to 175 300

TJ, TSTG TL

Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Typ ---Max 1.0 40 62.5 Units C/W C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2003 Fairchild Semiconductor Corporation

Rev. A, December 2003